Таблица техник напыления

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Сводная таблица техник напыления

Обозначения
C	Углерод	Incl	Инконель спл.	Ex	Превосходно	P	Плохо	RF	Эффективно RF распыление	*	Зависит от состава
Gr	Графит	VC	Стеклов. углерод	G	Хорошо	S	Сублимация	RF-R	Эффективно реактивное RF распыление	**	Хромир. стержень/полоска
Q	Кварц	SS	Нерж. сталь	F	Средне	D	Разлагается			***	Покрыты окс. алюминия

Быстрая навигация по материалам:

A B C D E G H I K L M N O P R S T U V Y Z

Материал	Обознач.	ТП	S/D	гр/см³	Темп°C для достиж. давл. насыщ. паров (Торр)			Методы испарения					Тип распыл.	Комментарии
					10^-8	10^-6	10^-4	Эл. луч	Термические источники
					10^-8	10^-6	10^-4	Эл. луч	Лодочка	Провол.	Корз.	Тигель
Aluminum	Al	660	—	2.7	677	821	1,010	Ex	—	—	W	TiB₂-BN, ZrB₂, BN	DC	Alloys W/Mo/Ta. Flash evap or use BN crucible.
Aluminum Antimonide	AlSb	1,080	—	4.3	—	—	—	—	—	—	—	—	RF
Aluminum Arsenide	AlAs	1,600	—	3.7	—	—	~ 1,300	—	—	—	—	—	RF
Aluminum Bromide	AlBr₃	97	—	2.64	—	—	~ 50	—	Mo	—	—	Gr	—
Aluminum Carbide	Al₄C₃	~1,400	D	2.36	—	—	~ 800	F	—	—	—	—	RF	n = 2.7
Aluminum Fluoride	AlF₃	1,291	S	2.88	410	490	700	P	Mo, W, Ta	—	—	Gr	RF
Aluminum Nitride	AlN	>2,200	S	3.26	—	—	~1,750	F	—	—	—	—	RF-R	Decomposes. Reactive evap in 10-³ T N₂ with glow discharge.
Aluminum Oxide	Al₂O₃	2,072	—	3.97	—	—	1,550	Ex	W	—	W	—	RF-R	Sapphire excellent in E-beam; forms smooth, hard films. n = 1.66
Aluminum Phosphide	AlP	2,000	—	2.42	—	—	—	—	—	—	—	—	RF
Aluminum, 2% Copper	Al₂%Cu	640	—	2.82	—	—	—	—	—	—	—	—	DC	Wire feed & flash. Difficult from dual sources.
Aluminum, 2% Silicon	Al₂%Si	640	—	2.69	—	—	1,010	—	—	—	—	TiB₂-BN	RF, DC	Wire feed & flash. Difficult from dual sources.
Antimony	Sb	630	S	6.68	279	345	425	P	Mo* Ta*	Mo, Ta	Mo, Ta	BN, C, Al₂O₃	RF, DC	Evaporates well
Antimony Oxide	Sb₂O₃	656	S	5.2	—	—	~300	G	Pt	—	Pt	BN, Al₂O₃	RF-R	Decomposes on W. n = 2.09, 2.18, 2.35
Antimony Selenide	Sb₂Se₃	611	—	—	—	—	-	—	Ta	—	—	C	RF	Stoichiometry variable.
Antimony Sulfide	Sb₂S₃	550	—	4.64	—	—	~200	G	Mo, Ta	—	Mo, Ta	Al₂O₃	—	No decomposition. n=3.19, 4.06, 4.3
Antimony Telluride	Sb₂Te₃	629	—	6.5	—	—	600	—	—	—	—	C	RF	Decomposes over 750° C
Arsenic	As	817	S	5.73	107	150	210	P	C	—	—	Al₂O₃, BeO, VC	—	Sublimes rapidly at low temp.
Arsenic Oxide	As₂O₃	312	—	3.74	—	—	—	—	—	—	—	—	—
Arsenic Selenide	As₂Se₃	~360	—	4.75	—	—	—	—	—	—	—	Al₂O₃, Q	RF
Arsenic Sulfide	As₂S₃	300	—	3.43	—	—	~400	F	Mo	—	—	Al₂O₃, Q	RF	n = 2.4, 2.81, 3.02
Arsenic Telluride	As₂Te₃	362	—	—	—	—	—	—	Flash	—	—	—	—	See JVST. 1973;10:748
Barium	Ba	725	—	3.51	545	627	735	F	W, Ta, Mo	W	W	Metals	RF	Wets without alloying; reacts with ceramics
Barium Chloride	BaCl₂	963	—	3.92	—	—	~650	—	Ta, Mo	—	—	—	RF	Preheat gently to outgas. n = 1.73
Barium Fluoride	BaF₂	1,355	S	4.89	—	—	~700	G	Mo	—	—	—	RF	n = 1.47
Barium Oxide	BaO	1,918	—	5.72	—	—	~1,300	P	Pt	—	Pt	Al₂O₃	RF, RF-R	Decomposes slightly. n = 1.98
Barium Sulfide	BaS	1,200	—	4.25	—	—	1,100	—	Mo	—	—	—	RF	n = 2.16
Barium Titanate	BaTiO₃	—	D	6.02	—	—	—	—	—	—	—	—	RF	Gives Ba. Co-evap. from 2 sources
Beryllium	Be	1,278	—	1.85	710	878	1,000	Ex	W, Ta	W	W	BeO, C, VC	DC	Wets W/Mo/Ta. Evaporates easily
Beryllium Carbide	Be₂C	>2,100	D	1.9	—	—	—	—	—	—	—	—	—
Beryllium Chloride	BeCl₂	405	—	1.9	—	—	~150	—	—	—	—	—	RF
Beryllium Fluoride	BeF₂	800	S	1.99	—	—	~200	G	—	—	—	—	—	n = <1.33
Beryllium Oxide	BeO	2,530	—	3.01	—	—	1,900	G	—	—	W	—	RF, RF-R	No decomposition from E-beam guns. n=1.72
Bismuth	Bi	271	—	9.8	330	410	520	Ex	W, Mo, Ta	W	W	Al₂O₃, VC	DC	Resistivity high.
Bismuth Fluoride	BiF₃	727	S	5.32	—	—	~300	—	—	—	—	Gr	RF	n = 1.74
Bismuth Oxide	Bi₂O₃	860	—	8.55	—	—	~1,400	P	Pt	—	Pt	—	RF, RF-R	n = 1.91
Bismuth Selenide	Bi₂Se₃	710	D	6.82	—	—	~650	G	—	—	—	Gr, Q	RF	Co-evap from 2 sources or sputter
Bismuth Sulfide	Bi₂S₃	685	D	7.39	—	—	-	—	—	—	—	—	RF	n = 1.34, 1.46
Bismuth Telluride	Bi₂Te₃	573	—	7.7	—	—	~600	—	W, Mo	—	—	Gr, Q	RF	Co-evap from 2 sources or sputter
Bismuth Titanate	Bi₂Ti₂O₇	—	D	—	—	—	-	—	—	—	—	—	RF	Sputter or co-evap from 2 sources in 10-² Torr O₂
Boron	B	2,079	—	2.34	1,278	1,548	1,797	Ex	C	—	—	C, VC	RF	Explodes with rapid cooling. Forms carbide with container
Boron Carbide	B₄C	2,350	—	2.52	2,500	2,580	2,650	Ex	—	—	—	—	RF	Similar to chromium.
Boron Nitride	BN	~3,000	S	2.25	—	—	~1,600	P	—	—	—	—	RF, RF-R	Decomposes when sputtered; Reactive preferred
Boron Oxide	B₂O₃	~450	—	1.81	—	—	~1,400	G	Pt, Mo	—	—	—	—	n = 1.48
Boron Sulfide	B₂S₃	310	—	1.55	—	—	800	—	—	—	—	Gr	RF
Cadmium	Cd	321	—	8.64	64	120	180	P	W, Mo, Ta	—	W, Mo, Ta	Al₂O₃, QDC,	RF	Bad for vacuum systems. Low sticking coefficient.
Cadmium Antimonide	Cd₃Sb₂	456	—	6.92	—	—	—	—	—	—	—	—	—
Cadmium Arsenide	Cd₃As₂	721	—	6.21	—	—	—	—	—	—	—	Q	RF
Cadmium Bromide	CdBr₂	567	—	5.19	—	—	~300	—	—	—	—	—	—
Cadmium Chloride	CdCl₂	568	—	4.05	—	—	~400	—	—	—	—	—	—
Cadmium Fluoride	CdF₂	1,100	—	6.64	—	—	~500	—	—	—	—	—	RF	n = 1.56
Cadmium Iodide	CdI₂	387	—	5.67	—	—	~250	—	—	—	—	—	—
Cadmium Oxide	CdO	>1,500	D	6.95	—	—	~530	—	—	—	—	—	RF-R	Disproportionates. n = 2.49
Cadmium Selenide	CdSe	>1,350	S	5.81	—	—	540	G	Mo, Ta	—	—	Al₂O₃, Q	RF	Evaporates easily. n = 2.4
Cadmium Sulfide	CdS	1,750	S	4.82	—	—	550	F	W, Mo, Ta	—	W	Al₂O₃, Q	RF	Sticking coefficient affected by substrate
Cadmium Telluride	CdTe	1,121	—	5.85	—	—	450	—	W, Mo, Ta	W	W, Ta, Mo	—	RF	Stoichiometry depends on substrate temp. n~2.6
Calcium	Ca	839	S	1.54	272	357	459	P	W	W	W	Al₂O₃, Q	—	Corrodes in air.
Calcium Fluoride	CaF₂	1,423	—	3.18	—	—	~1,100	—	W, Mo, Ta	W, Mo, Ta	W, Mo, Ta	Q	RF	Rate control important. Preheat gently to outgas. n = 1.43
Calcium Oxide	CaO	2,614	—	~3.3	—	—	~1,700	—	W, Mo	—	—	ZrO₂	RF-R	Forms volatile oxides with W/Mo.
Calcium Silicate	CaSiO₃	1,540	—	2.91	—	—	—	G	—	—	—	Q	RF	n = 1.61, 1.66
Calcium Sulfide	CaS	—	D	2.5	—	—	1,100	—	Mo	—	—	—	RF	Decomposes. n = 2.14
Calcium Titanate	CaTiO₃	1,975	—	4.1	1,490	1,600	1,690	P	—	—	—	—	RF	Disproportionates except in sputtering. n = 2.34
Calcium Tungstate	CaWO₄	—	—	6.06	—	—	—	G	W	—	—	—	RF	n = 1.92
Carbon	C	~3,652	S	1.8–2.1	1,657	1,867	2,137	Ex	—	—	—	—	PDC	E-beam preferred. Arc evaporation. Poor film adhesion.
Cerium	Ce	798	—	~6.70	970	1,150	1,380	G	W, Ta	W	W, Ta	Al₂O₃, BeO, VC	DC, RF
Cerium (III) Oxide	Ce₂O₃	1,692	—	6.86	—	—	—	F	W	—	—	—	—	Alloys with source. Use 0.015"–0.020" W boat. n = 1.95
Cerium (IV) Oxide	CeO₂	~2,600	—	7.13	1,890	2,000	2,310	G	W	—	—	—	RF, RF-R	Very little decomposition.
Cerium Fluoride	CeF₃	1,460	—	6.16	—	—	~900	G	W, Mo, Ta	—	Mo, Ta	—	RF	Preheat gently to outgas. n ~ 1.7
Cesium	Cs	28	—	1.88	-16	22	80	—	SS	—	—	Q	—
Cesium Bromide	CsBr	636	—	3.04	—	—	~400	—	W	—	—	—	RF	n = 1.70
Cesium Chloride	CsCl	645	—	3.99	—	—	~500	—	W	—	—	—	RF	n = 1.64
Cesium Fluoride	CsF	682	—	4.12	—	—	~500	—	W	—	—	—	RF	n = 1.48
Cesium Hydroxide	CsOH	272	—	3.68	—	—	550	—	Pt	—	—	—	—
Cesium Iodide	CsI	626	—	4.51	—	—	~500	—	W	—	—	Pt, Q	RF	n = 1.79
Chiolote	Na₅Al₃F₁₄	—	—	2.9	—	—	~800	—	Mo, W	—	—	—	RF	n = 1.33
Chromium	Cr	1,857	S	7.2	837	977	1,157	G	**	W	W	VC	DC	Films very adherent. High rates possible.
Chromium Boride	CrB	2,760(?)	—	6.17	—	—	—	—	—	—	—	—	RF
Chromium Bromide	CrBr₂	842	—	4.36	—	—	550	—	Incl	—	—	—	RF
Chromium Carbide	Cr₃C₂	1,980	—	6.68	—	—	~2,000	F	W	—	—	—	RF
Chromium Chloride	CrCl₂	824	—	2.88	—	—	550	—	Fe, Incl	—	—	—	RF
Chromium Oxide	Cr₂O₃	2,266	—	5.21	—	—	~2,000	G	W, Mo	—	W	—	RF, RF-R	Disproportionates to lower oxides; reoxidizes at 600° C in air. n = 2.55
Chromium Silicide	CrSi₂	1,490	—	5.5	—	—	—	—	—	—	—	—	RF
Chromium-Silicon Monoxide	Cr-SiO	—	S	*	*	*	*	G	W	—	W	—	RF	Flash evaporate
Cobalt Bromide	CoBr₂	678	D	4.91	—	—	400	—	Incl	—	—	—	RF
Cobalt Chloride	CoCl₂	724	D	3.36	—	—	472	—	Incl	—	—	—	RF
Cobalt Oxide	CoO	1,795	—	6.45	—	—	—	—	—	—	—	—	DC-R, RF-R	Sputter preferred.
Cobalt°	Co	1,495	—	8.9	850	990	1,200	Ex	W, Nb	—	W	Al₂O₃, BeO	DC	Alloys with W/Te/Mo
Copper	Cu	1,083	—	8.92	727	857	1,017	Ex	Mo	W	W	Al₂O₃, Mo, Ta	DC	Adhesion poor. Use interlayer (Cr). Evaporates using any source material.
Copper Chloride	CuCl	430	—	4.14	—	—	~600	—	—	—	—	—	RF	n = 1.93
Copper Oxide	Cu₂O	1,235	S	6	—	—	~600	G	Ta	—	—	Al₂O₃	DC-R, RF-R	n = 2.71
Copper Sulfide	Cu₂S	1,100	—	5.6	—	—	—	—	—	—	—	—	—
Cryolite	Na₃AlF₆	1,000	—	2.9	1,020	1,260	1,480	Ex	W, Mo, Ta	—	W, Mo, Ta	VC	RF	Large chunks reduce spitting Little decomposition
Dysprosium	Dy	1,412	—	8.55	625	750	900	G	Ta	—	—	—	DC
Dysprosium Fluoride	DyF₃	1,360	S	—	—	—	~800	G	Ta	—	—	—	RF
Dysprosium Oxide	Dy₂O₃	2,340	—	7.81	—	—	~1,400	—	Ir	—	—	—	RF, RF-R	Loses oxygen.
Erbium	Er	1,529	S	9.07	650	775	930	G	W, Ta	—	—	—	DC
Erbium Fluoride	ErF₃	1,350	—	—	—	—	~750	—	Mo	—	—	—	RF	See JVST. 1985; A3(6):2320.
Erbium Oxide	Er₂O₃	—	—	8.64	—	—	~1,600	—	Ir	—	—	—	RF, RF-R	Loses oxygen
Europium	Eu	822	S	5.24	280	360	480	F	W, Ta	—	—	Al₂O₃	DC	Low Te solubility
Europium Fluoride	EuF₂	1,380	—	6.5	—	—	~950	—	Mo	—	—	—	RF
Europium Oxide	Eu₂O₃	—	—	7.42	—	—	~1,600	G	Ir, Ta, W	—	—	ThO₂	RF, RF-R	Loses oxygen. Films clear and hard.
Europium Sulfide	EuS	—	—	5.75	—	—	-	G	—	—	—	—	RF
Gadolinium Carbide	GdC₂	—	—	—	—	—	1,500	—	—	—	—	C	RF	Decomposes under sputtering
Gadolinium Oxide	Gd₂O₃	2,330	—	7.41	—	—	—	F	Ir	—	—	—	RF, RF-R	Loses oxygen
Gadolinium°	Gd	1,313	—	7.9	760	900	1,175	Ex	Ta	—	—	Al₂O₃	DC	High Te solubility
Gallium	Ga	30	—	5.9	619	742	907	G	—	—	—	Al₂O₃, BeO, Q	—	Alloys with W/Te/Mo. Use E-beam gun.
Gallium Antimonide	GaSb	710	—	5.6	—	—	—	F	W, Ta	—	—	—	RF	Flash evaporate
Gallium Arsenide	GaAs	1,238	—	5.3	—	—	—	G	W, Ta	—	—	C	RF	Flash evaporate
Gallium Nitride	GaN	800	S	6.1	—	—	~200	—	—	—	—	Al₂O₃	RF, RF-R	Evaporate Ga in 10^-3 Torr N2
Gallium Oxide	Ga₂O₃	1,900	—	6.44	—	—	—	—	Pr, W	—	—	—	RF	Loses oxygen. n = 1.92
Gallium Phosphide	GaP	1,540	—	4.1	—	770	920	—	W, Ta	—	W	Q	RF	Does not decompose. Rate control important.
Germanium	Ge	937	—	5.35	812	957	1,167	Ex	W, C, Ta	—	—	Q, Al₂O₃	DC	Excellent films from E-beam
Germanium (II) Oxide	GeO	710	S	—	—	—	500	—	—	—	—	Q	RF	n = 1.61
Germanium (III) Oxide	GeO₂	1,086	—	6.24	—	—	~625	G	Ta, Mo	—	W, Mo	Q, Al₂O₃	RF-R	Similar to SiO; film predominantly GeO
Germanium Nitride	Ge₃N₂	450	S	5.2	—	—	~650	—	—	—	—	—	RF-R	Sputtering preferred
Germanium Telluride	GeTe	725	—	6.2	—	—	381	—	W, Mo	—	W	Q, Al₂O₃	RF
Glass, Schott^® 8329	—	—	—	2.2	—	—	—	Ex	—	—	—	—	RF	Evaporable alkali glass. Melt in air before evaporating.
Gold	Au	1,064	—	19.32	807	947	1,132	Ex	W*, Mo*, W	—	—	Al₂O₃, BN, VC, W	DC	Films soft; not very adherent.
Hafnium	Hf	2,227	—	13.31	2,160	2,250	3,090	G	—	—	—	—	DC
Hafnium Boride	HfB₂	3,250	—	10.5	—	—	—	—	—	—	—	—	DC, RF
Hafnium Carbide	HfC	~3,890	S	12.2	—	—	~2,600	—	—	—	—	—	RF
Hafnium Nitride	HfN	3,305	—	—	—	—	—	—	—	—	—	—	RF, RF-R
Hafnium Oxide	HfO₂	2,758	—	9.68	—	—	~2,500	F	W	—	—	—	RF, RF-R	Film HfO
Hafnium Silicide	HfSi₂	1,750	—	7.2	—	—	—	—	—	—	—	—	RF
Holmium	Ho	1,474	—	8.8	650	770	950	G	W, Ta	W	W	—	—
Holmium Fluoride	HoF₃	1,143	—	—	—	—	~800	—	—	—	—	Q	DC, RF
Holmium Oxide	Ho₂O₃	2,370	—	8.41	—	—	—	—	Ir	—	—	—	RF, RF-R	Loses oxygen
Inconel	Ni/Cr/Fe	1,425	—	8.5	—	—	—	G	W	W	W	—	DC	Use fine wire wrapped on W Low rate required for smooth films
Indium	In	157	—	7.3	487	597	742	Ex	W, Mo	—	W	Gr, Al₂O₃	DC	Wets W and Cu. Use Mo liner.
Indium (I) Oxide	In₂O	~600	S	6.99	—	—	650	—	—	—	—	—	RF	Decomposes under sputtering
Indium (I) Sulfide	In₂S	653	—	5.87	—	—	650	—	—	—	—	Gr	RF
Indium (II) Sulfide	InS	692	S	5.18	—	—	650	—	—	—	—	Gr	RF
Indium (II) Telluride	InTe	696	—	6.29	—	—	—	—	—	—	—	—	—
Indium (III) Oxide	In₂O₃	850	—	7.18	—	—	~1,200	G	W, Pt	—	—	Al₂O₃	—
Indium (III) Sulfide	In₂S₃	1,050	S	4.9	—	—	850	—	—	—	—	Gr	RF	Film In₂S
Indium (III) Telluride	In₂Te₃	667	—	5.78	—	—	—	—	—	—	—	—	RF	Sputtering preferred; or co-evaporate from 2 sources; flash
Indium Antimonide	InSb	535	—	5.8	—	—	—	—	W	—	—	—	RF	Decomposes. Sputter preferred; or co-evaporate.
Indium Arsenide	InAs	943	—	5.7	780	870	970	—	W	—	—	—	RF
Indium Nitride	InN	1,200	—	7	—	—	—	—	—	—	—	—	—
Indium Phosphide	InP	1,070	—	4.8	—	630	730	—	W, Ta	—	W, Ta	Gr	RF	Deposits are P rich
Indium Selenide	In₂Se₃	890	—	5.67	—	—	—	—	—	—	—	—	RF	Sputtering preferred; or co-evaporate from 2 sources; flash
Indium Tin Oxide	In₂O₃–SnO₂	1,800	S	—	—	—	—	—	—	—	—	—	—
Iridium	Ir	2,410	—	22.42	1,850	2,080	2,380	F	—	—	—	ThO₂	DC
Iron (II) Oxide	FeO	1,369	—	5.7	—	—	—	P	—	—	—	—	RF, RF-R	Decomposes; sputtering preferred. n=2.32
Iron (III) Oxide	Fe₂O₃	1,565	—	5.24	—	—	—	G	W	—	W	—	—	Disproportionates to Fe₃O₄ at 1,530° C. n = 3.01
Iron Bromide	₂-Feb	684	D	4.64	—	—	561	—	—	—	—	Fe	RF
Iron Chloride	FeCl₂	670	S	3.16	—	—	300	—	—	—	—	Fe	RF	n = 1.57
Iron Iodide	FeI₂	—	—	5.32	—	—	400	—	—	—	—	Fe	RF
Iron Sulfide	FeS	1,193	D	4.74	—	—	—	—	—	—	—	Al₂O₃	RF	Decomposes
Iron°	Fe	1,535	—	7.86	858	998	1,180	Ex	W	W	W	Al₂O₃, BeO	DC	Attacks W. Films hard, smooth. Preheat gently to outgas.
Kanthal	FeCrAl	—	—	7.1	—	—	—	—	W	W	W	—	DC
Lanthanum	La	921	—	6.15	990	1,212	1,388	Ex	W, Ta	—	—	Al₂O₃	RF	Films will burn in air if scraped
Lanthanum Boride	LaB₆	2,210	D	2.61	—	—	—	G	—	—	—	—	RF
Lanthanum Bromide	LaBr₃	783	—	5.06	—	—	—	—	—	—	Ta	—	RF	Hygroscopic. n=1.94
Lanthanum Fluoride	LaF₃	1,490	S	~6.0	—	—	900	G	Ta, Mo	—	Ta	—	RF	No decomposition. n ~1.6
Lanthanum Oxide	La₂O₃	2,307	—	6.51	—	—	1,400	G	W, Ta	—	—	—	RF	Loses oxygen. n~1.73
Lead	Pb	328	—	11.34	342	427	497	Ex	W, Mo	W	W, Ta	Al₂O₃, Q	DC
Lead Bromide	PbBr₂	373	—	6.66	—	—	~300	—	—	—	—	—	—
Lead Chloride	PbCl₂	501	—	5.85	—	—	~325	—	Pt	—	—	Al₂O₃	RF	Little decomposition
Lead Fluoride	PbF₂	855	S	8.24	—	—	~400	—	W, Pt, Mo	—	—	BeO	RF	n = 1.75
Lead Iodide	PbI₂	402	—	6.16	—	—	~500	—	Pt	—	—	Q	—
Lead Oxide	PbO	886	—	9.53	—	—	~550	—	Pt	—	—	Q, Al₂O₃	RF-R	No decomposition. n ~2.6
Lead Selenide	PbSe	1,065	S	8.1	—	—	~500	—	W, Mo	—	W	Gr, Al₂O₃	RF
Lead Stannate	PbSnO₃	1,115	—	8.1	670	780	905	P	Pt	—	Pt	Al₂O₃	RF	Disproportionates
Lead Sulfide	PbS	1,114	S	7.5	—	—	500	—	W	—	W, Mo	Q, Al₂O₃	RF	Little decomposition. n = 3.92
Lead Telluride	PbTe	917	—	8.16	780	910	1,050	—	Mo, Pt, Ta	—	—	Al₂O₃, Gr	RF	Deposits are Te rich. Sputtering preferred;
Lead Titanate	PbTiO₃	—	—	7.52	—	—	—	—	Ta	—	—	—	RF
Lithium	Li	181	—	0.53	227	307	407	G	Ta, SS	—	—	Al₂O₃, BeO	—	Metal reacts quickly in air
Lithium Bromide	LiBr	550	—	3.46	—	—	~500	—	Ni	—	—	—	RF	n = 1.78
Lithium Chloride	LiCl	605	—	2.07	—	—	400	—	Ni	—	—	—	RF	Preheat gently to outgas. n = 1.66
Lithium Fluoride	LiF	845	—	2.64	875	1,020	1,180	G	Ni, Ta, Mo, W	—	—	Al₂O₃	RF	Rate control important for optical films. Preheat gently to outgas. n = 1.39
Lithium Iodide	LiI	449	—	4.08	—	—	400	—	Mo, W	—	—	—	RF	n = 1.96
Lithium Oxide	Li₂O	>1,700	—	2.01	—	—	850	—	Pt, Ir	—	—	—	RF	n = 1.64
Lutetium	Lu	1,663	—	9.84	—	—	1,300	Ex	Ta	—	—	Al₂O₃	RF, DC
Lutetium Oxide	Lu₂O₃	—	—	9.42	—	—	1,400	—	Ir	—	—	—	RF	Decomposes
Magnesium	Mg	649	S	1.74	185	247	327	G	W, Mo, Ta, Cb	W	W	Al₂O₃, VC	DC	Extremely high rates possible
Magnesium Aluminate	MgAl₂O₄	2,135	—	3.6	—	—	—	G	—	—	—	—	RF	Natural spinel. n = 1.72
Magnesium Bromide	MgBr₂	700	—	3.72	—	—	~450	—	Ni	—	—	—	RF	Decomposes.
Magnesium Chloride	MgCl₂	714	—	2.32	—	—	400	—	Ni	—	—	—	RF	Decomposes. n = 1.67
Magnesium Fluoride	MgF₂	1,261	—	2.9–3.2	—	—	1,000	Ex	Mo, Ta	—	—	Al₂O₃	RF	Rate control and substrate heat important for Excellent with Mo. n = 1.38
Magnesium Iodide	MgI₂	<637	D	4.43	—	—	200	—	Ir	—	—	—	RF
Magnesium Oxide	MgO	2,852	—	3.58	—	—	1,300	G	—	—	—	C, Al₂O₃	RF, RF-R	Evaporates in 10^-3 Torr O₂ for stoichiometry.
Manganese	Mn	1,244	S	7.2	507	572	647	G	W, Ta, Mo	W	W	Al₂O₃, BeO	DC
Manganese (III) Oxide	Mn₂O₃	1,080	—	4.5	—	—	—	—	—	—	—	—	—
Manganese (IV) Oxide	MnO₂	535	—	5.03	—	—	—	P	W	—	W	—	RF-R	Loses oxygen at 535° C
Manganese Bromide	MnBr₂	—	D	4.39	—	—	500	—	Incl	—	—	—	RF
Manganese Chloride	MnCl₂	650	—	2.98	—	—	450	—	Incl	—	—	—	RF
Manganese Sulfide	MnS	—	D	3.99	—	—	1,300	—	Mo	—	—	—	RF	Decomposes. n = 2.70
Mercury	Hg	-39		13.55	-68	-42	-6	—	—	—	—	—	—
Mercury Sulfide	HgS	584	S	8.1	—	—	250	—	—	—	—	Al₂O₃	RF	Decomposes. n = 2.85, 3.20
Molybdenum	Mo	2,617	—	10.2	1,592	1,822	2,117	Ex	—	—	—	—	DC	Films smooth, hard. Careful degas required.
Molybdenum Boride	MoB₂	2,100	—	7.12	—	—	—	P	—	—	—	—	RF
Molybdenum Carbide	Mo₂C	2,687	—	8.9	—	—	—	F	—	—	—	—	RF	Evaporation of Mo(CO)₆ yields Mo₂C.
Molybdenum Disulfide	MoS₂	1,185	—	4.8	—	—	~50	—	—	—	—	—	RF
Molybdenum Oxide	MoO₃	795	S	4.69	—	—	~900	—	Mo, Pt	—	Mo	Al₂O₃, BN	RF	Slight oxygen loss. n = 1.9
Molybdenum Silicide	MoSi₂	2,050	—	6.31	—	—	—	—	W	—	—	—	RF	Decomposes
Neodymium	Nd	1,021	—	7.01	731	871	1,062	Ex	Ta	—	—	Al₂O₃	DC	Low W solubility
Neodymium Fluoride	NdF₃	1,410	—	6.5	—	—	~900	G	Mo, W	—	Mo, Ta	Al₂O₃	RF	Very little decomposition. n = 1.6
Neodymium Oxide	Nd₂O₃	~1,900	—	7.24	—	—	~1,400	G	Ta, W	—	—	ThO₂	RF, RF-R	Loses oxygen; films clear. E-beam preferred. n = 1.79
Nichrome IV^®	Ni/Cr	1,395	—	8.5	847	987	1,217	Ex	***	W	W, Ta	Al₂O₃, VC, BeO	DC	Alloys with W/Te/Mo
Nickel Bromide	NiBr₂	963	S	5.1	—	—	362	—	Incl	—	—	—	RF
Nickel Chloride	NiCl₂	1,001	S	3.55	—	—	444	—	Incl	—	—	—	RF
Nickel Oxide	NiO	1,984	—	6.67	—	—	~1,470	—	—	—	—	Al₂O₃	RF-R	Dissociates on heating. n = 2.18
Nickel°	Ni	1,453	—	8.9	927	1,072	1,262	Ex	W	W	W	Al₂O₃, BeO, VC	DC	Alloys with W/Te/Mo. Smooth adherent films
Nimendium°	Ni₃%Mn	1,425	—	8.8	—	—	—	—	—	—	—	—	DC
Niobium	Nb	2,468	—	8.57	1,728	1,977	2,287	Ex	W	—	—	—	DC	Attacks W source. n = 1.80
Niobium (II) Oxide	NbO	—	—	7.3	—	—	1,100	—	Pt	—	—	—	RF
Niobium (III) Oxide	Nb₂O₃	1,780	—	7.5	—	—	—	—	W	—	W	—	RF, RF-R
Niobium (V) Oxide	Nb₂O₅	1,485	—	4.47	—	—	—	—	W	—	W	—	RF, RF-R	n = 1.95
Niobium Boride	NbB₂	2,900	—	6.97	—	—	—	—	—	—	—	—	RF
Niobium Carbide	NbC	3,500	—	7.6	—	—	—	F	—	—	—	—	RF
Niobium Nitride	NbN	2,573	—	8.4	—	—	—	—	—	—	—	—	RF, RF-R	Reactive. Evaporates Nb in 10^-3 Torr N₂
Niobium Telluride	NbTeX	—	—	7.6	—	—	—	—	—	—	—	—	RF	Composition variable
Niobium-Tin	Nb₃Sn	—	—	—	—	—	—	Ex	—	—	—	—	DC	Co-evaporate from two sources
Osmium	Os	3,045	—	22.48	2,170	2,430	2,760	F	—	—	—	—	DC
Osmium Oxide	Os₂O₃	—	D	—	—	—	—	—	—	—	—	—	—	Deposits Os in 10^-3 Torr O₂
Palladium	Pd	1,554	S	12.02	842	992	1,192	Ex	W*	W	W	Al₂O₃, BeO	DC	Alloys with refractory metals.
Palladium Oxide	PdO	870	—	9.7	—	—	575	—	—	—	—	Al₂O₃	RF-R	Decomposes
Parylene	C₈H₈	300–400	—	1.1	—	—	—	—	—	—	—	—	—	Vapor-depositable plastic
Permalloy^®°	Ni/Fe	1,395	—	8.7	947	1,047	1,307	G	W	—	—	Al₂O₃, VC	DC	Film low in Ni
Phosphorus	P	44.1	—	1.82	327	361	402	—	—	—	—	Al₂O₃	—	Material reacts violently in air. n = 2.14
Phosphorus Nitride	P₃N₅	—	—	2.51	—	—	—	—	—	—	—	—	RF, RF-R
Platinum	Pt	1,772	—	21.45	1,292	1,492	1,747	Ex	W	W	W	C, ThO₂	DC	Alloys with metals. Films soft, poor adhesion.
Platinum Oxide	PtO₂	450	—	10.2	—	—	—	—	—	—	—	—	RF-R
Plutonium	Pu	641	—	19.84	—	—	—	—	W	—	—	—	—
Polonium	Po	254	—	9.4	117	170	244	—	—	—	—	Q	—
Potassium	K	63	—	0.86	23	60	125	—	Mo	—	—	Q	—	Metal reacts rapidly in air. Preheat gently outgas.
Potassium Bromide	KBr	734	—	2.75	—	—	~450	—	Ta, Mo	—	—	Q	RF	Preheat gently to outgas. n = 1.559
Potassium Chloride	KCl	770	S	1.98	—	—	510	G	Ta, Ni	—	—	—	RF	Preheat gently to outgas. n = 1.49
Potassium Fluoride	KF	858	—	2.48	—	—	~500	—	—	—	—	Q	RF	Preheat gently to outgas. n = 1.363
Potassium Hydroxide	KOH	360	—	2.04	—	—	~400	—	Pt	—	—	—	—	Preheat gently to outgas
Potassium Iodide	KI	681	—	3.13	—	—	~500	—	Ta	—	—	—	RF	Preheat gently to outgas. n = 1.677
Praseodymium	Pr	931	—	6.77	800	950	1,150	G	Ta	—	—	—	DC
Praseodymium Oxide	Pr₂O₃	—	D	7.07	—	—	1,400	G	Ir	—	—	ThO₂	RF, RF-R	Loses oxygen
Radium	Ra	700	—	5 (?)	246	320	416	—	—	—	—	—	—
Rhenium	Re	3,180	—	20.53	1,928	2,207	2,571	P	—	—	—	—	DC
Rhenium Oxide	ReO₃	—	D	~7	—	—	—	—	—	—	—	—	RF	Evaporate Re in 10^-3 Torr O₂
Rhodium	Rh	1,966	—	12.4	1,277	1,472	1,707	G	W	W	W	ThO₂, VC	DC	E-beam gun preferred
Rubidium	Rb	39	—	1.48	-3	37	111	—	—	—	—	Q	—
Rubidium Chloride	RbCl	718	—	2.09	—	—	~550	—	—	—	—	Q	RF	n = 1.493
Rubidium Iodide	RbI	647	—	3.55	—	—	~400	—	—	—	—	Q	RF	n = 1.647
Ruthenium	Ru	2,310	—	12.3	1,780	1,990	2,260	P	W	—	—	—	DC
Samarium	Sm	1,074	—	7.52	373	460	573	G	Ta	—	—	Al₂O₃	DC
Samarium Oxide	Sm₂O₃	2,350	—	8.35	—	—	—	G	Ir	—	—	ThO₂	RF, RF-R	Loses oxygen. Films smooth, clear.
Samarium Sulfide	Sm₂S₃	1,900	—	5.73	—	—	—	G	—	—	—	—	—
Scandium	Sc	1,541	—	2.99	714	837	1,002	Ex	W	—	—	Al₂O₃, BeO	RF	Alloys with Ta.
Scandium Oxide	Sc₂O₃	2,300	—	3.86	—	—	~400	F	—	—	—	—	RF, RF-R
Selenium	Se	217	—	4.81	89	125	170	G	W, Mo	W, Mo	W, Mo	Al₂O₃, VC	—	Bad for vacuum systems. High V.P.
Silicon	Si	1,410	—	2.32	992	1,147	1,337	F	W, Ta	—	—	BeO, Ta, VC	DC, RF	Alloys with W; use heavy W boat. SiO produced
Silicon (II) Oxide	SiO	>1,702	S	2.13	—	—	850	F	Ta	W	W	Ta	RF, RF-R	For resistance evaporation, use baffle box and low rate. n = 1.6
Silicon (IV) Oxide	SiO₂	1,610	—	~2.65	*	*	1,025*	Ex	—	—	—	Al₂O₃	RF	Quartz excellent in E-beam. n = 1.544, 1.553
Silicon Boride	SiB₆	—	—	—	—	—	—	P	—	—	—	—	RF
Silicon Carbide	SiC	~2,700	S, D	3.22	—	—	1,000	—	—	—	—	—	RF	Sputtering preferred. n = 2.654, 2.697
Silicon Nitride	Si₃N₄	1,900	—	3.44	—	—	~800	—	—	—	—	—	RF, RF-R
Silicon Selenide	SiSe	—	—	—	—	—	550	—	—	—	—	Q	RF
Silicon Sulfide	SiS	940	S	1.85	—	—	450	—	—	—	—	Q	RF	n = 1.853
Silicon Telluride	SiTe₂	—	—	4.39	—	—	550	—	—	—	—	Q	RF
Silver	Ag	962	—	10.5	847	958	1,105	Ex	W	Mo	Ta, Mo	Al₂O₃, W	DC
Silver Bromide	AgBr	432	D	6.47	—	—	~380	—	Ta	—	—	Q	RF	n = 2.253
Silver Chloride	AgCl	455	—	5.56	—	—	~520	—	Mo, Pt	—	Mo	Q	RF	n = 2.07
Silver Iodide	AgI	558	—	6.01	—	—	~500	—	Ta	—	—	—	RF	n = 2.21
Sodium	Na	98	—	0.97	74	124	192	—	Ta, SS	—	—	Q	—	Preheat gently to outgas. Metal reacts quickly in air. n = 4.22
Sodium Bromide	NaBr	747	—	3.2	—	—	~400	—	—	—	—	Q	RF	Preheat gently to outgas. n = 1.641
Sodium Chloride	NaCl	801	—	2.17	—	—	530	G	Ta, W, Mo	—	—	Q	RF	Copper oven; little decomposition Preheat gently to outgas. n = 1.544
Sodium Cyanide	NaCN	564	—	—	—	—	~550	—	Ag	—	—	—	RF	Preheat gently to outgas. n = 1.452
Sodium Fluoride	NaF	993	—	2.56	—	—	~1,000	G	Mo, Ta, W	—	—	BeO	RF	Preheat gently to outgas. No decomposition. n = 1.336
Sodium Hydroxide	NaOH	318	—	2.13	—	—	~470	—	Pt	—	—	—	—	Preheat gently to outgas. n = 1.358
Spinel	MgAI₂O₄	—	—	8	—	—	—	G	—	—	—	—	RF	n = 1.72
Strontium	Sr	769	—	2.6	239	309	403	P	W, Ta, Mo	W	W	VC	RF	Wets but does not alloy with W/Te/Mo. May react in air.
Strontium Chloride	SrCl₂	875	—	3.05	—	—	—	—	—	—	—	—	—	n = 1.650
Strontium Fluoride	SrF₂	1,473	—	4.24	—	—	~1,000	—	—	—	—	Al₂O₃	RF	n = 1.442
Strontium Oxide	SrO	2,430	S	4.7	—	—	1,500	—	Mo	—	—	Al₂O₃	RF	Reacts with W/Mo. n = 1.810
Strontium Sulfide	SrS	>2,000	—	3.7	—	—	—	—	Mo	—	—	—	RF	Decomposes. n = 2.107
Sulfur	S	113	—	2.07	13	19	57	P	W	—	W	Q	—	Bad for vacuum systems. n = 1.957
Supermalloy^®°	Ni/Fe/Mo	1,410	—	8.9	—	—	—	G	—	—	—	—	DC	Sputtering preferred; or co-evaporate from 2 sources-Ni/Fe and Mo
Tantalum	Ta	2,996	—	16.6	1,960	2,240	2,590	Ex	—	—	—	—	DC	Forms good films
Tantalum Boride	TaB₂	3,000(?)	—	11.15	—	—	—	—	—	—	—	—	RF
Tantalum Carbide	TaC	3,880	—	13.9	—	—	~2,500	—	—	—	—	—	RF
Tantalum Nitride	TaN	3,360	—	16.3	—	—	—	—	—	—	—	—	RF, RF-R	Evaporate Ta in 10^-3 Torr N₂
Tantalum Pentoxide	Ta₂O₅	1,872	—	8.2	1,550	1,780	1,920	G	Ta	W	W	VC	RF, RF-R	Slight decomposition. Evaporate Te in 10^-3 Torr O₂. n = 2.6
Tantalum Sulfide	TaS₂	>1,300	—	—	—	—	—	—	—	—	—	—	RF
Technetium	Tc	2,200	—	11.5	1,570	1,800	2,090	—	—	—	—	—	—
Teflon^®	PTFE	330	—	2.9	—	—	—	—	W	—	—	—	RF	Baffled source. Film structure doubtful.
Tellurium	Te	449	—	6.25	157	207	277	P	W, Ta	W	W, Ta	Al₂O₃, Q	RF	Wets without alloying. n =1.002
Terbium	Tb	1,356	—	8.23	800	950	1,150	Ex	Ta	—	—	Al₂O₃	RF
Terbium Fluoride	TbF₃	1,172	—	—	—	—	~800	—	—	—	—	—	RF
Terbium Oxide	Tb₂O₃	2,387	—	7.87	—	—	1,300	—	Ir	—	—	—	RF	Partially decomposes
Terbium Peroxide	Tb₄O₇	—	D	—	—	—	—	—	Ta	—	—	—	RF	Films TbO
Thallium	Tl	304	—	11.85	280	360	470	P	W, Ta	—	W	Al₂O₃, Q	DC	Wets freely
Thallium Bromide	TlBr	480	S	7.56	—	—	~250	—	Ta	—	—	Q	RF	n = 2.4 - 2.8
Thallium Chloride	TlCl	430	S	7	—	—	~150	—	Ta	—	—	Q	RF	n = 2.247
Thallium Iodide	TlI	440	S	7.1	—	—	~250	—	—	—	—	Q	RF	n = 2.78
Thallium Oxide	Tl₂O₂	717	—	10.19	—	—	350	—	—	—	—	—	RF	Disproportionates at 850° C to Tl₂O
Thorium	Th	1,750	—	11.7	1,430	1,660	1,925	Ex	W, Ta, Mo	W	W	—	—
Thorium Bromide	ThBr₄	610	S	5.67	—	—	—	—	Mo	—	—	—	—	n=2.47
Thorium Carbide	ThC₂	2,655	—	8.96	—	—	~2,300	—	—	—	—	C	RF
Thorium Fluoride	ThF₄	>900	—	6.32	—	—	~750	F	Mo	—	W	VC	RF
Thorium Oxide	ThO₂	3,220	—	9.86	—	—	~2,100	G	W	—	—	—	RF, RF-R
Thorium Oxyfluoride	ThOF₂	900	—	9.1	—	—	—	—	Mo, Ta	—	—	—	—	n = 1.52
Thorium Sulfide	ThS₂	1,925	—	7.3	—	—	—	—	—	—	—	—	RF	Sputtering preferred; or co-evaporate from 2 sources
Thulium	Tm	1,545	S	9.32	461	554	680	G	Ta	—	—	Al₂O₃	DC
Thulium Oxide	Tm₂O₃	—	—	8.9	—	—	1,500	—	Ir	—	—	—	RF	Decomposes
Tin	Sn	232	—	7.28	682	807	997	Ex	Mo	W	W	Al₂O₃	DC	Wets Mo low sputter power. Use Ta liner in E-beam guns.
Tin Oxide	SnO₂	1,630	S	6.95	—	—	~1,000	Ex	W	W	W	Q, Al₂O₃	RF, RF-R	Films from W are oxygen deficient; oxidize in air. n = 2.0
Tin Selenide	SnSe	861	—	6.18	—	—	~400	G	—	—	—	Q	RF
Tin Sulfide	SnS	882	—	5.22	—	—	~450	—	—	—	—	Q	RF
Tin Telluride	SnTe	780	D	6.48	—	—	~450	—	—	—	—	Q	RF
Titanium	Ti	1,660	—	4.5	1,067	1,235	1,453	Ex	W	—	—	TiC	DC	Alloys with W/Te/Mo; evolves gas on first heating
Titanium (II) Oxide	TiO	1,750	—	4.93	—	—	~1,500	G	W, Mo	—	—	VC	RF	Preheat gently to outgas. n = 2.2
Titanium (III) Oxide	Ti₂O₃	2,130	D	4.6	—	—	—	G	W	—	—	—	RF	Decomposes
Titanium (IV) Oxide	TiO₂	1,830	—	4.26	—	—	~1,300	F	W, Mo	—	W	—	RF, RF-R	Suboxide, must be reoxidized to rutile. Ta reduces TiO₂ to TiO and Ti. n = 2.616, 2.903
Titanium Boride	TiB₂	2,900	—	4.5	—	—	—	P	—	—	—	—	RF
Titanium Carbide	TiC	3,140	—	4.93	—	—	~2,300	—	—	—	—	—	RF
Titanium Nitride	TiN	2,930	—	5.22	—	—	—	G	Mo	—	—	—	RF, RF-R	Sputtering preferred. Decomposes with thermal evaporation.
Tungsten	W	3,410	—	19.35	2,117	2,407	2,757	G	—	—	—	—	DC	Forms volatile oxides. Films hard and adherent.
Tungsten Boride	WB₂	~2,900	—	10.77	—	—	—	P	—	—	—	—	RF
Tungsten Carbide	W₂C	2,860	—	17.15	1,480	1,720	2,120	Ex	C	—	—	—	RF
Tungsten Disulfide	WS₂	1,250	D	7.5	—	—	—	—	—	—	—	—	RF
Tungsten Oxide	WO₃	1,473	S	7.16	—	—	980	G	W, Pt	—	—	—	RF-R	Preheat gently to outgas. W reduces oxide slightly. n = 1.68
Tungsten Selenide	WSe₂	—	—	9	—	—	—	—	—	—	—	—	RF
Tungsten Silicide	WSi₂	>900	—	9.4	—	—	—	—	—	—	—	—	RF
Tungsten Telluride	WTe₂	—	—	9.49	—	—	—	—	—	—	—	Q	RF
Uranium	U	1,132	—	19.05	1,132	1,327	1,582	G	Mo, W	W	W	—	—	Films oxidize
Uranium (II) Sulfide	US	>2,000	—	10.87	—	—	—	—	—	—	—	—	—
Uranium (III) Oxide	U₂O₃	1,300	D	8.3	—	—	—	—	W	—	W	—	RF-R	Disproportionates at 1,300° C to UO₂
Uranium (IV) Oxide	UO₂	2,878	—	10.96	—	—	—	—	W	—	W	—	RF	Ta causes decomposition
Uranium (IV) Sulfide	US₂	>1,100	—	7.96	—	—	—	—	W	—	—	—	RF	Slight decomposition
Uranium Carbide	UC₂	2,350	—	11.28	—	—	2,100	—	—	—	—	C	RF	Decomposes
Uranium Fluoride	UF₄	960	—	6.7	—	—	300	—	Ni	—	—	—	RF
Uranium Phosphide	UP₂	—	—	8.57	—	—	1,200	—	Ta	—	—	—	RF	Decomposes
Vanadium	V	1,890	—	5.96	1,162	1,332	1,547	Ex	W, Mo	—	—	—	DC	Wets Mo. E-beam-evaporated films preferred. n = 3.03
Vanadium (IV) Oxide	VO₂	1,967	S	4.34	—	—	~575	—	—	—	—	—	RF, RF-R	Sputtering preferred.
Vanadium (V) Oxide	V₂O₅	690	D	3.36	—	—	~500	—	—	—	—	Q	RF	n = 1.46, 1.52, 1.76
Vanadium Boride	VB₂	2,400	—	5.1	—	—	—	—	—	—	—	—	RF
Vanadium Carbide	VC	2,810	—	5.77	—	—	~1,800	—	—	—	—	—	RF
Vanadium Nitride	VN	2,320	—	6.13	—	—	—	—	—	—	—	—	RF, RF-R
Vanadium Silicide	VSi₂	1,700	—	4.42	—	—	—	—	—	—	—	—	RF
Ytterbium	Yb	819	S	6.96	520	590	690	G	Ta	—	—	—	—
Ytterbium Fluoride	YbF₃	1,157	—	—	—	—	~800	—	Mo	—	—	—	RF
Ytterbium Oxide	Yb₂O₃	2,346	S	9.17	—	—	~1,500	—	Ir	—	—	—	RF, RF-R	Loses oxygen
Yttrium	Y	1,522	—	4.47	830	973	1,157	Ex	W, Ta	W	W	Al₂O₃	RF, DC	High Ta solubility
Yttrium Aluminum Oxide	Y₃Al₅O₁₂	1,990	—	—	—	—	—	G	—	W	W	—	RF	Films not ferroelectric
Yttrium Fluoride	YF₃	1,387	—	4.01	—	—	—	—	—	—	—	—	RF
Yttrium Oxide	Y₂O₃	2,410	—	5.01	—	—	~2,000	G	W	—	—	C	RF, RF-R	Loses oxygen; films smooth and clear. n = 1.79
Zinc	Zn	420	—	7.14	127	177	250	Ex	Mo, W, Ta	W	W	Al₂O₃, Q	DC	Evaporates well under wide range of conditions
Zinc Antimonide	Zn₃Sb₂	570	—	6.33	—	—	—	—	—	—	—	—	RF
Zinc Bromide	ZnBr₂	394	—	4.2	—	—	~300	—	W	—	—	C	RF	Decomposes. n= 1.545
Zinc Fluoride	ZnF₂	872	—	4.95	—	—	~800	—	Pt, Ta	—	—	Q	RF
Zinc Nitride	Zn₃N₂	—	—	6.22	—	—	—	—	Mo	—	—	—	RF	Decomposes
Zinc Oxide	ZnO	1,975	—	5.61	—	—	~1,800	F	—	—	—	—	RF-R	n = 2.008, 2.029
Zinc Selenide	ZnSe	>1,100	—	5.42	—	—	660	—	Ta, W, Mo	W, Mo	W, Mo	Q	RF	Preheat gently to outgas. Evaporates well. n = 2.89
Zinc Sulfide	ZnS	1,700	S	3.98	—	—	~800	G	Ta, Mo	—	—	—	RF	Preheat gently to outgas. Films partially decompose. n = 2.356
Zinc Telluride	ZnTe	1,239	—	6.34	—	—	~600	—	Mo, Ta	—	—	—	RF	Preheat gently to outgas. n = 3.56
Zirconium	Zr	1,852	—	6.49	1,477	1,702	1,987	Ex	W	—	—	—	DC	Alloys with W. Films oxidize readily.
Zirconium Boride	ZrB₂	~3,200	—	6.09	—	—	—	G	—	—	—	—	RF
Zirconium Carbide	ZrC	3,540	—	6.73	—	—	~2,500	—	—	—	—	—	RF
Zirconium Nitride	ZrN	2,980	—	7.09	—	—	—	—	—	—	—	—	RF, RF-R	Reactively evaporate in 10^-3 Torr N₂.
Zirconium Oxide	ZrO₂	~2,700	—	5.89	—	—	~2,200	G	W	—	—	—	RF, RF-R	Films oxygen deficient, clear and hard. n = 2.13, 2.19, 2.20
Zirconium Silicate	ZrSiO₄	2,550	—	4.56	—	—	—	—	—	—	—	—	RF	n = 1.92–1.96; 1.97–2.02
Zirconium Silicide	ZrSi₂	1,700	—	4.88	—	—	—	—	—	—	—	—	RF

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